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Electronic Engineering Times
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  [ Jul.6, 2008  ]
 
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3G ±â¼ú µðÁöÅÐ ½ÅÈ£ ó¸® MEMS ÇÁ·Î±×·¡¸Óºí ·ÎÁ÷
802.11n EDA/IC ¼³°è ¸¶ÀÌÅ©·ÎÄÁÆ®·Ñ·¯ ÄõµåÄÚ¾î
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¾Æ³¯·Î±× µðÀÚÀÎ EMI/EMC ¼³°è ¸ðÅÍ Á¦¾î RF ¹«¼±
¾îÇø®ÄÉÀÌ¼Ç ÇÁ·Î¼¼¼­ ¿¡³ÊÁö ¼öÈ® ±â¼ú ¸ÖƼÄÚ¾î ÇÁ·Î¼¼¼­ º¸¾È ¼³°è
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»ýüÀÎ½Ä Ç÷¡½Ã ½ÅÁ¦Ç° ¼Ò½Ä ¼¾¼­ ±â¼ú
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¹öÆÛ/½ºÅ丮Áö IC ¿£Áø ¿À½Ç·¹ÀÌÅÍ ¼ÒÇÁÆ®¿þ¾î
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Á¦¾î ¼³°è IPTV ÆÄ¿ö µðÀÚÀÎ ¹«¼± ³×Æ®¿öÅ©
¼³°è Å×½ºÆ® ¹ß±¤ ´ÙÀÌ¿Àµå (LED) °øÁ¤/Á¦Á¶ Áö±×ºñ
       

±¤ ´ÙÀÌ¿Àµå ¸®¼Ò½º

2007-11-6 Æä¾îÂ÷ÀϵåÀÇ Á¤·ù´ÙÀÌ¿Àµå, È¿À²¼º ¹× ½Å·Ú¼º Çâ»óµÅ
Æä¾îÂ÷ÀÏµå ¹ÝµµÃ¼´Â »õ·Î¿î STEALTH II Fast-recovery diode 7Á¾À» »õ·Ó°Ô ¼±º¸¿´´Ù.
2007-8-29 ¸®´Ï¾î, °íÀü¾Ð ¾ÆÀ̵ð¾ó ´ÙÀÌ¿Àµå OR ÄÁÆ®·Ñ·¯ °³¹ß
¸®´Ï¾î Å×Å©³î·ÎÁö´Â ´ÙÁß N+1 ¸®´ø´øÆ® ÆÄ¿ö ¼­ÇöóÀÌ ¾îÇø®ÄÉÀÌ¼Ç ¹× °í°¡¿ë¼º ½Ã½ºÅÛ¿¡¼­ »ç¿ëÇÒ ¼ö ÀÖ´Â Àú¼Õ½Ç ´ÜÀÏ °íÀü¾Ð ¾ÆÀ̵ð¾ó ´ÙÀÌ¿Àµå-OR ÄÁÆ®·Ñ·¯ 'LTC4357'À» °³¹ßÇß´Ù°í ¹àÇû´Ù.
2007-7-26 Intense °íÈÖµµ CW ´ÙÀÌ¿Àµå ·¹ÀÌÀú, »ê¾÷¿ë Á¦Ç°¿¡ ÀûÇÕ
Intense»ç´Â 1,064nm ·¹ÀÌÀú ´ÙÀÌ¿ÀµåÀÎ HPD1110À» ¹ßÇ¥Çß´Ù.
2007-7-25 Cree, SiC ´ÙÀÌ¿Àµå °³¹ß À§ÇØ ÀϺ» NIEC¿Í Çù·ÂŰ·Î
Cree´Â NIEC(Nihon Inter Electronics Corp.)¿Í Á¦ÈÞ¸¦ ¸Î°í ÀϺ»ÀÇ SiC(silicon carbide) ±â¹ÝÀÇ Schottky ÆÄ¿ö Á¤·ù±â ´ÙÀÌ¿Àµå ¶óÀÎÀ» °³¹ßÇÑ´Ù°í ¹ßÇ¥Çß´Ù.
2007-7-23 ¾ÆÆ®¸áÀÇ ·¹ÀÌÀú ´ÙÀÌ¿Àµå µå¶óÀ̹ö, º¹ÇÕ DVD Æ÷¸Ë Áö¿ø
Atmel»ç´Â Á¶ÇÕµÈ HD DVD/Blu-ray, DVD¿Í CD µå¶óÀ̹ö·Î ½Ã¿ëÇϱâ À§ÇÑ ·¹ÀÌÀú ´ÙÀÌ¿Àµå µå¶óÀ̹ö ICÀÎ ATR0881À» Ãâ½ÃÇß´Ù.
2007-7-5 ÀÎÇǴϾð, ESD·ÎºÎÅÍ °í¼Ó ÀÎÅÍÆäÀ̽º Â÷ÆóÇÏ´Â ´ÙÀÌ¿Àµå ¾î·¹ÀÌ °³¹ß
Infineon Technologies»ç°¡ ³·Àº Á¤Àü¿ë·®ÀÇ °úµµÀü¾Ð ¾ïÁ¦±â(TVS) ´ÙÀÌ¿Àµå ¾î·¹ÀÌ °è¿­À» °³¹ßÇß´Ù.
2007-6-28 TVS ´ÙÀÌ¿Àµå ȸ·Î¸¦ À§ÇÑ ¾îÇø®ÄÉÀ̼Ç
¾Ö¹ú¶õ½Ã TVS ¹× ´ÙÀÌ¿Àµå ¾î·¹ÀÌÀÇ ¸î °¡Áö ÁÖ¿ä ¾îÇø®ÄÉÀÌ¼Ç Æ¯Â¡µé¿¡ ´ëÇØ¼­ ºÐ¼®ÇÑ´Ù.
2007-6-13 ÀÎÇǴϾð, ÃÖ°í 30kV ½ºÆÄÀÌÅ©¿¡ ´ëÇØ ESD ¹æÁöÇÏ´Â ´ÙÀÌ¿Àµå ¾î·¡ÀÌ °³¹ß
Infineon»ç Technologies»ç´Â ÃÖ°í 30kVÀÇ Àü¾Ð ½ºÆÄÀÌÅ©·ÎºÎÅÍ CAN Â÷·® Á¦¾î ³×Æ®¿öÅ©¿Í »ê¾÷¿ë ¹ö½º ½Ã½ºÅÛÀ» º¸È£Çϱâ À§ÇÑ °úµµÀü¾Ð ¾ïÁ¦±â(TVS) ´ÙÀÌ¿Àµå ¾î·¡ÀÌ °è¿­À» °³¹ßÇß´Ù.
2007-6-4 NXP, 1ȸ·ÎÀÇ ¾ç¹æÇâ ESD ¹æÁö ±â´É Á¦°øÇÏ´Â ´ÙÀÌ¿Àµå °³¹ß
NXP Semiconductors»ç´Â ÀÛÀº SMD ÇÃ¶ó½ºÆ½ ÆÐŰÁö¿¡ ¼ö³³µÈ ÀÚ»çÀÇ ±ØÈ÷ ³·Àº Á¤Àü¿ë·®À» °¡Áø ¾ç¹æÇâ ESD º¸È£ ´ÙÀÌ¿Àµå¸¦ ¹ßÇ¥Çß´Ù.
2007-6-1 °í¼Ó ´ÙÀÌ¿Àµå MOSFET ÀÌ¿ëÇÑ 6´Ü°è Á¤·ù
ºê·¯½Ã¸®½º DC ¸ðÅÍ´Â »ýȰ°¡Àü¿¡¼­ È¿À² Çâ»ó°ú ¿¡³ÊÁö Àý¾àÀ» À§ÇØ ³Î¸® »ç¿ëµÇ°í ÀÖ´Ù. ƯÈ÷ 3»ó ºê·¯½Ã¸®½º DC ¸ðÅͰ¡ ¼±È£µÇ´Âµ¥, ¿©±â¿¡ 6´Ü°è Àü·ù¸¦ Á¦°øÇϱâ À§ÇØ »ç¿ëµÇ´Â ½ºÀ§Äª ¸ðµå¿¡ ´ëÇØ ¾Ë¾Æº»´Ù.
2007-5-24 RF PIN ´ÙÀÌ¿ÀµåÀÇ Ä³¸®¾î ¼ö¸í ¹× Àü¸é ÀúÇ×
RF PIN ´ÙÀÌ¿Àµå ¹°¸®ÇÐÀÇ ±âº»»çÇ׿¡ ´ëÇØ ¼³¸íÇÑ´Ù. ÀϹÝÀûÀÎ PIN ´ÙÀÌ¿Àµå µðÀÚÀÎ °í·Á»çÇ× ¹× ij¸®¾î ¼ö¸íÀÇ ÃøÁ¤ ¹æ¹ýÀÌ ¼Ò°³µÈ´Ù.
2007-5-24 Ŭ¸³ÇÎ, Ŭ·¥ÇÎ ¹× °úÀü·ù Â÷´Ü ¾îÇø®ÄÉÀ̼ǿ¡ »ç¿ëµÇ´Â ¼îÆ®±â ´ÙÀÌ¿Àµå
Infineon Technologies»ç´Â ȸ·Î º¸È£ ¹× ÆÄÇü º¸Á¸¿¡ ÃÖÀûÀÎ ¸î °¡Áö Á¾·ù¸¦ Æ÷ÇÔ, ¼îƮŰ ´ÙÀÌ¿ÀµåÀÇ ¿Ïº®ÇÑ ¶óÀÎÀ» Á¦°øÇÑ´Ù.
2007-4-25 TVS ¾Ö¹ú¶õ½Ã ´ÙÀÌ¿Àµå SPICE Macro ¸ðµ¨
SPICE Macro¸ðµ¨µéÀº TVS ¾Ö¹ú¶õ½Ã ´ÙÀÌ¿ÀµåÀÇ Àü·ù ´ë Àü¾Ð Ư¼ºÀÇ Á¤È®ÇÑ ½Ã¹Ä·¹À̼ÇÀ» Á¦°øÇÑ´Ù. ÀÌ ¸ðµ¨µéÀº ¼­Áö º¸È£ ȸ·ÎÀÇ ¼º´ÉÀ» ºÐ¼®Çϰí ÃÖÀûÈ­ÇÏ´Â µ¥ ÀÌ¿ëµÉ ¼ö ÀÖ´Ù. TVS macro ¸ðµ¨µéÀº Ç¥ÁØ SPICE µð¹ÙÀ̽ºµéÀ» ÇϳªÀÇ ¼­ºê ȸ·Î¿¡ °áÇÕ½ÃÅ´À¸·Î½á »ý¼ºµÈ´Ù.
2007-4-10 ¸®´Ï¾î, µà¾ó ¾ÆÀ̵ð¾ó ´ÙÀÌ¿Àµå OR ÄÁÆ®·Ñ·¯ °³¹ß
¸®´Ï¾î Å×Å©³î·ÎÁö ÄÚ¸®¾Æ°¡ µà¾ó ¾ÆÀ̵ð¾ó ´ÙÀÌ¿Àµå OR ÄÁÆ®·Ñ·¯ LTC4355¸¦ °³¹ßÇß´Ù°í ¹àÇû´Ù.
2007-4-3 »þÇÁ, º¹ÇÕ DVD Ç÷¹À̾î À§ÇÑ Ã»ÀÚ»ö ·¹ÀÌÀú ´ÙÀÌ¿Àµå ¾ç»ê
Sharp»ç´Â 5¿ùºÎÅÍ °íÃâ·ÂÀÇ Ã»ÀÚ»ö ·¹ÀÌÀú ´ÙÀÌ¿Àµå GH04P21A2G¸¦ ¾ç»êÇÒ °èȹÀ̶ó°í ¹ßÇ¥Çß´Ù.
2007-3-28 ºñÇ¥ÁØ µ¿ÀÛ ½Ã MAX2140 ³»ºÎ ESD ´ÙÀÌ¿Àµå º¸È£¸¦ À§ÇÑ ¼³°è
ÇÖ Ç÷¯±×ÀÇ °æ¿ì, ESD ´ÙÀÌ¿Àµå ¹®Á¦ÀÇ ¿øÀÎÀ» »ìÆìº¸°í, ±× °°Àº ½ÇÆÐ¸¦ ¹æÁöÇÏ´Â µ¥ ÀûÇÕÇÑ È¸·Î¸¦ »êÁ¤ÇÏ°í µðÀÚÀÎÇÑ´Ù.
2007-3-27 Microsemi, ÀÇ·á¿ë 500/600V Á¦Ç°¿¡ ÀûÇÕÇÑ °í¼Ó ȸº¹ ´ÙÀÌ¿Àµå Ãâ½Ã
Microsemi»ç´Â Ãֽм¼´ë POWER MOS 8 Á¦Ç° °è¿­ÀÇ FREDFET(H-FREDFET) °í¼Ó ȸº¹ ´ÙÀÌ¿Àµå °è¿­À» Ãâ½ÃÇß´Ù.
2007-3-23 ·Î¿È, 0603 »çÀÌÁî Á¦³Ê ´ÙÀÌ¿Àµå/¼îƮŰ ´ÙÀÌ¿Àµå °³¹ß
·Î¿ÈÀüÀÚ°¡ °¢Á¾ ÀüÀÚ±â±â¿ëÀ¸·Î, »õ·Î¿î ´ÙÀÌ¿Àµå ÆÐŰÁö 'GMD2'¸¦ ä¿ëÇÑ Á¦³Ê ´ÙÀÌ¿Àµå¤ý¼îƮŰ ¹è¸®¾î ´ÙÀÌ¿Àµå¸¦ °³¹ßÇÏ¿´´Ù.
2007-3-1 RohmÀÇ ½Å±â¼ú·Î ±×¸° ·¹ÀÌÀú ´ÙÀÌ¿Àµå °³¹ß
Rohm»ç´Â ºñ±Ø¼º GaN(gallium nitride)ÀÇ °áÁ¤ »ý¼º ±â¼úÀ» °³¹ßÇϰí, ºí·ç-¹ÙÀ̿÷¿ ·¹ÀÌÀú ´ÙÀÌ¿Àµå »ý¼º ½Ãµµ¸¦ ¼º°øÀûÀ¸·Î ¸¶¹«¸®Çß´Ù°í ¹ßÇ¥Çß´Ù.
2006-12-18 ON Semi, ±âÆÇ °ø°£ Àý¾àÇØ ÁÖ´Â ESD ´ÙÀÌ¿Àµå ¹è¿­ ¹ßÇ¥
ON Semiconductor»ç´Â ÃʼÒÇü SOT-953 ÆÐŰÁö¿¡ ¼ö³³µÈ ³·Àº Á¤Àü¿ë·®ÀÇ Á¤Àü±â ¹æÀü(ESD) º¸È£ ´ÙÀÌ¿Àµå ¾î·¹ÀÌ NUP45V6 ½Ã¸®Á ¹ßÇ¥Çß´Ù.
2006-11-27 STMicro¿Í Velox, GaN ¼îƮŰ ´ÙÀÌ¿Àµå °øµ¿ Ãâ½Ã
STMicroelectronics¿Í Velox ¹ÝµµÃ¼´Â GaN ¼îƮŰ ´ÙÀÌ¿Àµå¸¦ °øµ¿À¸·Î Ãâ½ÃÇÑ´Ù°í ¹ßÇ¥Çß´Ù.
2006-11-22 Sharp, ºí·ç ·¹ÀÌÀú ´ÙÀÌ¿Àµå ½ÃÀå ÁøÃâ
Sharp»ç°¡ Nichia»ç¿¡ ÀÌ¾î ºí·ç·¹ÀÌÀú ´ÙÀÌ¿Àµå¸¦ °ø±ÞÇÏ´Â µÎ ¹øÂ° ¾÷ü°¡ µÇ¾ú´Ù.
2006-11-16 PFC ¾îÇø®ÄÉÀ̼ǿ¡ ÀûÇÕÇÑ SiC ¼îƮŰ ´ÙÀÌ¿Àµå
SiC´Â PFC ¾îÇø®ÄÉÀ̼ÇÀÇ °ÅÀÇ ¸ðµç Àü·Â ¹üÀ§¿¡ ÀûÇÕÇÑ ÀÌ»óÀû ¼º´É Ư¼ºÀ» °®´Â ºÎ½ºÆ® ´ÙÀÌ¿Àµå¸¦ ¸¸µé ¼ö ÀÖµµ·Ï ÇØÁÖ¾î PFC ¾îÇø®ÄÉÀ̼ÇÀÇ Àü·Â ¼Õ½ÇÀ» ÁÙ¿©ÁØ´Ù.
2006-10-5 ON Semi, ¸¶ÀÌÅ©·Î ÆÐŰÁö ESD Protection ´ÙÀÌ¿Àµå, ¼îƮŰ ´ÙÀÌ¿Àµå °ø°³
ON Semiconductor»ç´Â ¼¼ °¡Áö »õ·Î¿î ESD ´ÙÀÌ¿Àµå¿Í ¼¼ °¡Áö ¼îƮŰ ´ÙÀÌ¿Àµå(Schottky diodes)·Î ±¸¼ºµÈ ÃʼÒÇü SOD-923 ÆÐŰÁö¸¦ ¼Ò°³Çß´Ù.
2006-9-22 ¹Î°¨ÇÑ ÀüÀÚȸ·Î º¸È£ÇÏ´Â Á¦³Ê ´ÙÀÌ¿Àµå ÃʼÒÇü Á¶¸³Ç°
Tyco Electronics»çÀÇ »ç¾÷´ÜÀ§ÀÎ Raychem Circuit ProtectionÀº PolyZen ÁßÇÕü °­È­Çü Á¤¹Ð Á¦³Ê ´ÙÀÌ¿Àµå ÃʼÒÇü Á¶¸³Ç°À» ¹ßÇ¥Çß´Ù.
2006-7-28 Cree, µ¥½ºÅ©Åé PC¿¡ ÀûÇÕÇÑ ¼îƮŰ ´ÙÀÌ¿Àµå Ãâ½Ã·Î Zero Recovery Á¦Ç°±º È®Àå
Cree»ç´Â 600 V¿¡¼­ µ¿ÀÛÇÏ´Â 2A Zero Recocery Á¤·ù±â¸¦ °³¹ßÇß´Ù.
2006-7-3 4T ¾ÆÅ°ÅØÃ³¿Í ÇÉ Æ÷Åä´ÙÀÌ¿Àµå ÀÌ¿ëÇÑ CMOS À̹ÌÁö ¼¾¼­ÀÇ ¼º´É °³¼±
À̹ÌÁö ǰÁúÀ» ȹ±âÀûÀ¸·Î °³¼±½ÃŲ ¿À´Ã³¯ÀÇ »õ·Î¿î CMOS À̹ÌÁö ¼¾¼­ ±â¼úµéÀº Àü·Â, ½Ã½ºÅÛ ÅëÇÕ, ÆûÆÑÅÍ, Àüü ½Ã½ºÅÛ ºñ¿ë ¸é¿¡¼­ À¯¸®ÇÑ CMOS ¼¾¼­°¡ ³Î¸® º¸±ÞµÇµµ·Ï ÇØÁØ´Ù.
2006-5-8 SOD-723 ÆÐŰÁö·Î °ø±ÞµÇ´Â ´ÙÀÌ¿Àµå
ON Semiconductor»ç´Â 1.4 x 0.6 x 0.5 mm Å©±âÀÇ SOD-723 ÆÐŰÁö¿¡ ¼ö³³µÈ 3Á¾ÀÇ ½ÅÇü Schottky¿Í 3Á¾ÀÇ ½ÅÇü ESD ´ÙÀÌ¿Àµå¸¦ ¹ßÇ¥Çß´Ù.
2006-4-28 ON Semiconductor, SOD-723 ÆÐŰÁö¿¡ ¼ö³³µÈ Schottky¿Í ESD ´ÙÀÌ¿Àµå ¹ßÇ¥
ON Semiconductor»ç´Â 1.4 x 0.6 x 0.5 mm Å©±âÀÇ SOD-723 ÆÐŰÁö¿¡ ¼ö³³µÈ ÈÞ´ë¿ë Á¦Ç°À» ¸ñÇ¥·Î ÇÏ´Â 3Á¾ÀÇ ¼îƮŰ ´ÙÀÌ¿Àµå¿Í 3Á¾ÀÇ ESD ´ÙÀÌ¿Àµå¸¦ ¹ßÇ¥Çß´Ù.
2006-4-20 HD-DVD/Blu-ray, DVD¿ë ·¹ÀÌÀú ´ÙÀÌ¿Àµå µå¶óÀ̹ö IC
Atmel»ç´Â HD-DVD/Blu-ray, DVD, CD Ç÷¹À̾î¿Í PC CD-ROM µå¶óÀ̺긦 Á¶ÇÕÇϵµ·Ï ¼³°èÇÑ ÀÚ»çÀÇ »õ·Î¿î ATR0885 ·¹ÀÌÀú ´ÙÀÌ¿Àµå µå¶óÀ̹ö IC¸¦ °ø±ÞÇÑ´Ù°í ¹ßÇ¥Çß´Ù.
2006-4-17 HV Component, Á¤°Ý 7,000VÀÇ °íÀü¾Ð ´ÙÀÌ¿Àµå ¼±º¸¿©
HV Component»ç´Â ÀÚ»ç °íÀü¾ÐÀÇ ´ÙÀÌ¿ÀµåÀÇ ÃֽŠ°è¿­À» ¹ßÇ¥Çß´Ù.
2006-2-8 PCB °ø°£ Àý¾àÇÏ´Â ½ÅÈ£ ´ÙÀÌ¿Àµå ¾î·¹ÀÌ
TT ÀüÀÚȸ»çÀÎ BI Technologies»ç´Â PCBÀÇ °ø°£À» Àý¾àÇØÁÖ´Â ´ÜÀÏ Á÷·Ä ÆÐŰÁö(SIP) ÇüÅÂÀÇ RoHS ÀûÇÕÇü ½ÅÈ£ ´ÙÀÌ¿Àµå ¾î·¡ÀÌ D Series¸¦ ¹ßÇ¥Çß´Ù.
2005-12-19 ¼ÒÇü ¸®µåÇÁ·¹ÀÓÀÇ ÆÐŰÁö¿¡ ¼ö³³µÈ ESD ´ÙÀÌ¿Àµå ¾î·¹ÀÌ
STMicroelectronics»ç´Â °øÀü¿¡ ¹Î°¨ÇÑ ÀåÄ¡¸¦ °úµµÀü¾ÐÀ¸·Î ÀÎÇÑ ¼Õ»ó ¶Ç´Â ¿­È­¸¦ ¹æÁöÇϵµ·Ï ¼³°èÇÑ ÃʼÒÇü ¸®µåÇÁ·¹ÀÓÀÇ ÆÐŰÁö¿¡ ¼ö³³µÈ ESD ´ÙÀÌ¿Àµå ¾î·¡ÀÌÀÇ »õ·Î¿î °è¿­À» ¹ßÇ¥Çß´Ù.
2005-11-29 ºÎÆ®½ºÆ®·¦ ´ÙÀÌ¿Àµå¸¦ °¡Áø ¾ÈÁ¤±â IC
International Rectifier(IR)»ç´Â ȸ·Î¸¦ ´Ü¼øÈ­Çϱâ À§ÇØ ºÎÆ®½ºÆ®·¦ ´ÙÀÌ¿Àµå¸¦ ³»ÀåÇϰí ÀÖ´Â, Çü±¤µîÀ» À§ÇÑ »õ·Î¿î IRS2153D ÀüÀÚ½Ä ¾ÈÁ¤±â IC¸¦ Ãâ½ÃÇß´Ù.
2005-11-10 Photonic, Ãâ·ÂÀü·Â 70mWÀÇ ½ÅÇü ·¹ÀÌÀú ´ÙÀÌ¿Àµå ¸ðµâ Ãâ½Ã
Photonic Products»ç´Â 70 mWÀÇ ¸Å¿ì ³ô°í ¸Å¿ì ¾ÈÁ¤µÈ Ãâ·ÂÀü·ÂÀ» Á¦°øÇÏ´Â Á¶Á¤°¡´ÉÇÑ AR ÇǺ¹Çü À¯¸® ±¤ÇкÎǰÀÎ »õ·Î¿î 660nm ·¹ÀÌÀú ´ÙÀÌ¿Àµå ¸ðµâÀ» Ãâ½ÃÇß´Ù. ÀÌ 660nm ±¤¾çÀÚ ·¹ÀÌÀú ¸ðµâ PM806G-GRÀº 9mm ÆÐŰÁö¿¡ 100mWÀÇ Àý´ë ÃÖ´ë ±¤Ãâ·ÂÀü·ÂÀ» °¡Áø Opnext HL6548FG °íÀü·Â ·¹ÀÌÀú ´ÙÀÌ¿Àµå¿Í ³»ºÎ °¨½Ã¿ë ±¤´ÙÀÌ¿Àµå¸¦ ³»ÀåÇϰí ÀÖ´Ù.
2005-9-13 Epcos, ´ÙÀÌ¿Àµå ¼Ö·ç¼Ç Áï¼® ±³Ã¼¿ë Á¦Ç° °ø±Þ
Epcos»ç´Â SOD 323 ÆÐŰÁö¿¡ TVS ´ÙÀÌ¿Àµå¿Í °°Àº 2.5x0.8mm Å©±âÀÇ ³³¶« ÆÐµå¸¦ °¡Áø 3pF À¯ÇüÀ» ¹ßÇ¥ÇÔÀ¸·Î½á ÀÚ»çÀÇ CeraDiode CDS4 °è¿­À» È®ÀåÇߴµ¥ ÀÌ È¸»ç´Â ÀÌ ½ÅÇü CDS4C16GTH´Â ´ÙÀÌ¿Àµå ¼Ö·ç¼ÇÀÇ Áï¼® ±³Ã¼¿ëÀ¸·Î »ç¿ëÇÒ ¼ö À־ °í°´µéÀÌ ºñ¿ëÀÌ ¸¹ÀÌ µé°í ½Î°í ½Ã°£ÀÌ °É¸®´Â ±âÆÇÀÇ Àç¼³°è¸¦ ÇÇÇÒ ¼ö ÀÖµµ·Ï ÇÑ´Ù°í ¸»Çß´Ù.
2005-7-28 KEC, °íÈ¿À² °íÁÖÆÄ ¼îƮŰ ¹è¸®¾î ´ÙÀÌ¿Àµå ±¹»êÈ­ °³¹ß ¼º°ø
KEC»ç°¡ °íÈ¿À² °íÁÖÆÄ ¼îƮŰ ¹è¸®¾î ´ÙÀÌ¿Àµå(RF-SBD) ±¹»êÈ­ °³¹ß¿¡ ¼º°øÇÏ¿©, 9¿ùºÎÅÍ ±¹³»¿Ü ÆÇ¸Å¿¡ µé¾î°£´Ù
2005-7-11 Zetex, ¹èÅ͸® ¼ö¸í ¿¬Àå¿ë ´ÙÀÌ¿Àµå °³¹ß
°¢°¢ 1¥ìA¿Í 4¥ìA 30VÀÇ Æò±Õ ÃÖ´ë ¿ªÀü·ù Á¤°ÝÀ» °¡Áø Zetex Semiconductors»çÀÇ »õ·Î¿î ¼îƮŰ À庮 ´ÙÀÌ¿Àµå´Â ÃæÀü±â¿¡¼­ºÎÅÍ LED µå¶óÀ̹ö¿¡ À̸£±â±îÁö ´Ù¾çÇÑ Á¦Ç°ÀÇ ¹èÅ͸® ¼ö¸í ¿¬Àå¿¡ µµ¿òÀ» ÁØ´Ù
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